Datasheet > IAUC100N10S5N040

IAUC100N10S5N040

更新时间： 2024-11-07 11:13:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	227K
描述
车规级MOSFET

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IAUC100N10S5N040 数据手册

IAUC100N10S5N040

OptiMOS^TM-5 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

100

m

100

Features

• N-channel - Enhancement mode - Normal level

PG-TDSON-8

• AEC qualified

• MSL1 up to 260°C peak reflow

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Type

Package

Marking

IAUC100N10S5N040

PG-TDSON-8

5N1N040

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

100

400

234

100

±20

T _C=100°C, V_GS=10V

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

I _D=50A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

V_GS

T _C=25°C,

T _J=175°C

P_tot

Power dissipation

167

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

page 1

2018-06-12

12 3 4 5 6 7...9

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