Datasheet > IAUC100N08S5N043

IAUC100N08S5N043

更新时间： 2024-11-19 14:54:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	773K
描述
车规级MOSFET

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IAUC100N08S5N043 数据手册

IAUC100N08S5N043

OptiMOS™-5 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

4.3

100

Features

• N-channel - Enhancement mode

PG-TDSON-8

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

PG-TDSON-8

5N08043

IAUC100N08S5N043

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

100

T _C=100 °C,

V_GS=10 V¹⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25 °C

400

120

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=50 A

100

V_GS

P_tot

±20

T _C=25 °C

Power dissipation

125

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2018-07-24

12 3 4 5 6 7...9

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