Datasheet > IAUC100N04S6N022

IAUC100N04S6N022

更新时间： 2024-09-17 14:55:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	666K
描述
Infineon introduces its latest OptiMOS?6 40V power MOS technology in the 5x6mm2 SS08 leadless package with highest quality level and robustness for automotive applications.?A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.

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IAUC100N04S6N022 数据手册

IAUC100N04S6N022

OptiMOS^™- 6 Power-Transistor

Product Summary

V_DS

2.2

100

R_DS(on),max

I_D

Features

PG-TDSON-8

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IAUC100N04S6N022

PG-TDSON-8

6N04N022

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

100

T _C=100°C, V_GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

400

147

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=20A, R _G,min=25W

I _AS

R _G,min=25W

V_GS

±20

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2019-04-01

12 3 4 5 6 7...9

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