Datasheet > IAM-82028

IAM-82028

更新时间： 2024-01-08 19:31:03

品牌	Logo	应用领域
安捷伦 - AGILENT		放大器
页数	文件大小	规格书
4页	62K
描述
Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/ IF Amp

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技术参数
数据手册

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IAM-82028 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SOP8,.4	Reach Compliance Code：	unknown
风险等级：	5.32	其他特性：	LOAD INSENSITIVE, HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
JESD-609代码：	e0	安装特点：	SURFACE MOUNT
端子数量：	8	最高工作温度：	125 °C
最低工作温度：	-55 °C	封装主体材料：	CERAMIC
封装等效代码：	SOP8,.4	电源：	10 V
射频/微波设备类型：	DOWN CONVERTER	子类别：	RF/Microwave Mixers
最大压摆率：	65 mA	表面贴装：	YES
技术：	BIPOLAR	端子面层：	Tin/Lead (Sn/Pb)
最大电压驻波比：	2.3

IAM-82028 数据手册

Silicon Bipolar MMIC 5 GHz

Active Double Balanced Mixer/

IF Amp

Technical Data

IAM-82028

28 Package

Features

• 15 dB RF-IF Conversion

Gain from 0.05 - 5 GHz

Description

The IAM-82028 is a complete

moderate-power double-balanced

active mixer housed in a

• IF Output from DC to 2 GHz

miniature ceramic hermetic

surface mount package. It is

designed for narrow or wide

bandwidth commercial, industrial

and military applications having

RF inputs up to 5 GHz and IF

outputs from DC to 2 GHz.

Operation at RF and LO

frequencies less than 50 MHz can

be achieved using optional

external capacitors to ground.

The IAM-82028 is particularly well

suited for applications that

require load-insensitive

• IF Output P_ldBup to

+12 dBm

• Single Polarity Bias Supply:

V_CC=7to13V

• Load-Insensitive

Performance

PIN 1

• Conversion Gain Flat Over

Temperature

downconversion, modulation,

demodulation and phase

detection for fiber-optic, GPS

satellite navigation, mobile radio,

and communications receivers.

•

Low LO Power Requirements:

0 dBm Typical

• Low RF to IF Feedthrough,

Low LO Leakage

• Hermetic Ceramic Surface

Mount Package

conversion gain and good

The IAM series of Gilbert

multiplier-based frequency

converters is fabricated using

HP’s 10 GHz f_T, 25 GHz f_MAX

spurious signal suppression and

moderate dynamic range with

minimum LO power. Typical

applications include frequency

ISOSAT -I silicon bipolar process

which uses nitride self-alignment,

submicrometer lithography,

trench isolation, ion implantation,

gold metallization and polyimide

inter-metal dielectric and scratch

protection to achieve excellent

performance, uniformity and

reliability.

Typical Biasing Configuration and

Functional Block Diagram

7-131

5965-9114E

12 3 4

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