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HZS33NB2 PDF预览

HZS33NB2

更新时间: 2024-11-06 22:14:31
品牌 Logo 应用领域
瑞萨 - RENESAS 二极管齐纳二极管测试
页数 文件大小 规格书
7页 57K
描述
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

HZS33NB2 技术参数

生命周期:Obsolete零件包装代码:DO-34
包装说明:MHD, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.48
Is Samacsys:N其他特性:LOW LEAKAGE, LOW ZENER IMPEDANCE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:65 ΩJEDEC-95代码:DO-34
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.4 W认证状态:Not Qualified
标称参考电压:31.1 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
最大电压容差:2.51%工作测试电流:5 mA
Base Number Matches:1

HZS33NB2 数据手册

 浏览型号HZS33NB2的Datasheet PDF文件第2页浏览型号HZS33NB2的Datasheet PDF文件第3页浏览型号HZS33NB2的Datasheet PDF文件第4页浏览型号HZS33NB2的Datasheet PDF文件第5页浏览型号HZS33NB2的Datasheet PDF文件第6页浏览型号HZS33NB2的Datasheet PDF文件第7页 
HZS-N Series  
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply  
REJ03G0185-0100Z  
(Previous: ADE-208-124)  
Rev.1.00  
Mar.11.2004  
Features  
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized  
power supply, etc.  
Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.  
Suitable for 5mm-pitch high speed automatic insertion.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZS-N Series  
Type No.  
MHD  
Pin Arrangement  
B
2
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
Rev.1.00, Mar.11.2004, page 1 of 6  

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