Datasheet > HZS11B3L

HZS11B3L

更新时间： 2024-02-10 10:15:48

品牌	Logo	应用领域
日立 - HITACHI		测试二极管
页数	文件大小	规格书
6页	28K
描述
Zener Diode, 10.9V V(Z), 1.83%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN

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HZS11B3L 技术参数

HZS-L Series

Silicon Epitaxial Planar Zener Diode for Low Noise Application

ADE-208-121A(Z)

Rev 1

Features

•

Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

stabilized power supply, etc.

•

Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-L Series

Type No.

MHD

Outline

Type No.

Cathode band

1. Cathode

2. Anode

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
HZS11B3LRX	RENESAS	获取价格	暂无描述
HZS11B3LRX-E	RENESAS	获取价格	暂无描述
HZS11B3LRY	HITACHI	获取价格	Zener Diode, 0.4W, Silicon, Unidirectional, DO-34, DO-34, 2 PIN
HZS11B3LTA	RENESAS	获取价格	0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
HZS11B3LTA-E	RENESAS	获取价格	HZS11B3LTA-E
HZS11B3LTAX	RENESAS	获取价格	暂无描述
HZS11B3LTD	HITACHI	获取价格	Zener Diode, 0.4W, Silicon, Unidirectional, DO-34, DO-34, 2 PIN
HZS11B3LTDX	RENESAS	获取价格	暂无描述
HZS11B3LTE	RENESAS	获取价格	暂无描述
HZS11B3RX	RENESAS	获取价格	暂无描述