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HZM3.3WA PDF预览

HZM3.3WA

更新时间: 2024-11-09 11:03:11
品牌 Logo 应用领域
瑞萨 - RENESAS 二极管齐纳二极管测试光电二极管局域网
页数 文件大小 规格书
8页 86K
描述
SILICON EPITAXIAL PLANAR ZENER DIODE FOR SURGE ABSORB

HZM3.3WA 技术参数

生命周期:Obsolete零件包装代码:SC-59A
包装说明:SC-59A, MPAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.54
Is Samacsys:N配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:130 ΩJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:3.3 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL最大电压容差:6.06%
工作测试电流:5 mABase Number Matches:1

HZM3.3WA 数据手册

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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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