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HZ3B3-N PDF预览

HZ3B3-N

更新时间: 2024-11-12 19:10:27
品牌 Logo 应用领域
瑞萨 - RENESAS 测试二极管
页数 文件大小 规格书
7页 95K
描述
3.1V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, SC-40, 2 PIN

HZ3B3-N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:O-XALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:100 ΩJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:3.1 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:3.23%
工作测试电流:5 mABase Number Matches:1

HZ3B3-N 数据手册

 浏览型号HZ3B3-N的Datasheet PDF文件第2页浏览型号HZ3B3-N的Datasheet PDF文件第3页浏览型号HZ3B3-N的Datasheet PDF文件第4页浏览型号HZ3B3-N的Datasheet PDF文件第5页浏览型号HZ3B3-N的Datasheet PDF文件第6页浏览型号HZ3B3-N的Datasheet PDF文件第7页 
HZ-N Series  
Silicon Planar Zener Diode for Stabilized Power Supply  
REJ03G1625-0100  
Rev.1.00  
Mar 25, 2008  
Features  
Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized  
power supply, etc.  
Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.  
Ordering Information  
Part No.  
Cathode band  
Package Name  
Package Code  
HZ-N Series  
Black  
DO-35  
GRZZ0002ZB-A  
Pin Arrangement  
7
B 2  
2
1
Part No.  
Cathode band  
1. Cathode  
2. Anode  
REJ03G1625-0100 Rev.1.00 Mar 25, 2008  
Page 1 of 6  
25  

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