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HYR163200G-840 PDF预览

HYR163200G-840

更新时间： 2024-11-11 20:10:51
品牌 Logo 应用领域
英飞凌 - INFINEON 时钟动态存储器内存集成电路
页数 文件大小 规格书
10页 410K
描述
Rambus DRAM Module, 32MX16, 40ns, CMOS, RIMM-184

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中文翻译

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HYR163200G-840 技术参数

生命周期：Obsolete零件包装代码：DMA
包装说明：DIMM, DIMM184,40针数：84
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.28风险等级：5.84
访问模式：BLOCK ORIENTED PROTOCOL最长访问时间：40 ns
最大时钟频率 (fCLK)：800 MHzI/O 类型：COMMON
JESD-30 代码：R-XDMA-N184内存密度：536870912 bit
内存集成电路类型：RAMBUS DRAM MODULE内存宽度：16
功能数量：1端口数量：1
端子数量：84字数：33554432 words
字数代码：32000000工作模式：SYNCHRONOUS
组织：32MX16输出特性：3-STATE
封装主体材料：UNSPECIFIED封装代码：DIMM
封装等效代码：DIMM184,40封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY电源：1.8/2.5,2.5 V
认证状态：Not Qualified子类别：DRAMs
最大供电电压 (Vsup)：2.63 V最小供电电压 (Vsup)：2.37 V
标称供电电压 (Vsup)：2.5 V表面贴装：NO
技术：CMOS端子形式：NO LEAD
端子节距：1 mm端子位置：DUAL
Base Number Matches：1

HYR163200G-840 数据手册

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HYR16(18)3200G  
64/72 MByte RIMM Modules  
Direct RDRAM RIMM Modules  
Perliminary Information  
Rev. 0.9  
Features  
Overview  
n
n
n
High speed 800, 711 & 600 MHz RDRAM storage  
184 edge connector pads with 1mm pad spacing  
Maximum module PCB size: 133.5mm x 34.9mm x  
1.37mm (5.21” x 1.36” x 0.05”)  
The Direct Rambus™ RIMM™ module is a general  
purpose high-performance memory subsystem suitable  
for use in a broad range of applications including  
computer memory, personal computers, workstations,  
and other applications where high bandwidth and low  
latency are required.  
n
Each RDRAM has 32 banks, for a total of  
256banks on each 128MB module  
n
n
n
n
n
Gold plated edge connector pad contacts  
Serial Presence Detect (SPD) support  
Operates from a 2.5 volt supply (±5%)  
Low power and powerdown self refresh modes  
Separate Row and Column buses for higher effi-  
ciency  
The 64 MB Direct Rambus RIMM module consists of  
eight 72Mb Direct Rambus DRAM (Direct RDRAM™)  
devices. These are extremely high-speed CMOS  
DRAMs organized as 4M words by 18 bits. The use of  
Rambus Signaling Level (RSL) technology permits  
600MHz to 800MHz transfer rates while using conven-  
tional system and board design technologies. Direct  
RDRAM devices are capable of sustained data trans-  
fers at 1.25 ns per two bytes (10ns per sixteen bytes).  
Part Number Designators  
I/O Freq.  
Organization  
MHz  
Part  
Designator  
The RDRAM architecture enables the highest  
sustained bandwidth for multiple, simultaneous,  
randomly addressed, memory transactions. The sepa-  
rate control and data buses with independent row and  
column control yield over 95% bus efficiency. The  
RDRAM's 32-bank architecture supports up to four  
simultaneous transactions per device.  
32M x 16  
32M x 16  
32M x 16  
32M x 16  
32M x 18  
32M x 18  
32M x 18  
32M x 18  
600  
711  
800  
800  
600  
711  
800  
800  
HYR163200G-653  
HYR163200G-745  
HYR163200G-845  
HYR163200G-840  
HYR183200G-653  
HYR183200G-745  
HYR183200G-845  
HYR183200G-840  
Form Factor  
The Rambus RIMM modules are offered in a 184-pad  
1mm edge connector pad pitch form factor suitable for  
184 contact RIMM connectors. The RIMM module is  
suitable for desktop and other system applications.  
Figure 1 shows an eight device Rambus RIMM module  
without heat spreader.  
Last Modified on 7/13/99  
1
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