HY62UF16400/ HY62QF16400/ HY62EF16400/
HY62SF16400 Series 256Kx16bit full CMOS SRAM
PRELIMINARY
FEATURES
DESCRIPTION
·
·
·
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
- 1.5V(min) data retention
Standard pin configuration
- 48ball uBGA
The
HY62UF16400
/
HY62QF16400
/
HY62EF16400 / HY62SF16400 is a high speed,
super low power and 4Mbit full CMOS SRAM
organized as 262,144 words by 16bits. The
HY62UF16400 / HY62QF16400 / HY62EF16400 /
HY62SF16400 uses high performance full CMOS
process technology and is designed for high
speed and low power circuit technology. It is
particularly well-suited for the high density low
power system application. This device has a data
retention mode that guarantees data to remain
valid at a minimum power supply voltage of 1.5V.
·
Product
No.
Voltage
(V)
Speed
(ns)
Operation
Current(mA)
Standby Current(uA)
Temperature
(°C)
LL
20
20
20
20
20
20
20
20
SL
4
4
4
4
4
4
4
4
HY62UF16400
HY62UF16400-I
HY62QF16400
HY62QF16400-I
HY62EF16400
HY62EF16400-I
HY62SF16400
HY62SF16400-I
3.0
3.0
2.5
2.5
2.0
2.0
1.8
1.8
70/85/100
70/85/100
85/100/120
85/100/120
100/120/150
100/120/150
120/150/200
120/150/200
15
15
10
10
10
10
10
10
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature
2. Current value is max.
PIN CONNECTION ( Top View )
BLOCK DIAGRAM
ROW
DECODER
A0
I/O1
/LB /OE A0 A1 A2 NC
IO9 /UB A3 A4 /CS IO1
IO10 IO11 A5 A6 IO2 IO3
Vss IO12 A17 A7 IO4 Vcc
Vcc IO13 NC A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC A12 A13 /WE IO8
NC A8 A9 A10 A11 NC
I/O8
I/O9
MEMORY ARRAY
1024x128x16
I/O16
A17
/CS
/OE
/LB
/UB
/WE
PIN DESCRIPTION
Pin Name
Pin Funtion
Pin Name
Pin Funtion
/CS
/WE
/OE
/LB
Chip Select
Write Enable
Output Enable
Low Byte Control(I/O1~I/O8)
I/O1~I/O16
A0~A17
Vcc
Data Input/Output
Address Input
Power(3.0V/2.5V/2.0V/1.8V)
Ground
Vss
/UB
Upper Byte Control(I/O9~I/O16) NC
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Feb. 99
Hyundai Semiconductor