5秒后页面跳转
HY5V22F-55 PDF预览

HY5V22F-55

更新时间: 2024-11-27 04:22:43
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路动态存储器时钟
页数 文件大小 规格书
15页 914K
描述
4 Banks x 1M x 32Bit Synchronous DRAM

HY5V22F-55 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA90,9X15,32针数:90
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.84
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:5 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):183 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PBGA-B90
JESD-609代码:e1长度:13 mm
内存密度:134217728 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:32功能数量:1
端口数量:1端子数量:90
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA90,9X15,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.22 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

HY5V22F-55 数据手册

 浏览型号HY5V22F-55的Datasheet PDF文件第2页浏览型号HY5V22F-55的Datasheet PDF文件第3页浏览型号HY5V22F-55的Datasheet PDF文件第4页浏览型号HY5V22F-55的Datasheet PDF文件第5页浏览型号HY5V22F-55的Datasheet PDF文件第6页浏览型号HY5V22F-55的Datasheet PDF文件第7页 
HY57V283220(L)T(P)/ HY5V22(L)F(P)  
4 Banks x 1M x 32Bit Synchronous DRAM  
Revision History  
Revision No.  
History  
Remark  
0.1  
0.2  
Defined Preliminary Specification  
1) Modified FBGA Ball Configuration Typo.  
2) Changed Functional Block Diagram from A10 to A11.  
3) Changed VDD min from 3.0V to 3.135V.  
4) Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.  
5) Insert tAC2 Value.  
6) Insdrt tRAS & CLK Value.  
0.3  
0.4  
0.5  
0.6  
0.7  
Defined IDD Spec.  
Delited Preliminary.  
Changed IDD Spec.  
133MHz Speed Added  
Changed FBGA Package Size from 11x13 to 8x13.  
1) Changed VDD min from 3.135V to 3.0V.  
2) Changed VIL min from VSSQ-0.3V to -0.3V.  
0.8  
0.9  
Modified of size erra. (Page15)  
(Equation : 13.00 ± 10 -> 13.00 ± 0.10)  
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume  
any responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.9 / July 2004  

与HY5V22F-55相关器件

型号 品牌 获取价格 描述 数据表
HY5V22F-55I HYNIX

获取价格

Synchronous DRAM, 4MX32, 5ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90
HY5V22F-5I HYNIX

获取价格

Synchronous DRAM, 4MX32, 4.5ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90
HY5V22F-6 HYNIX

获取价格

4 Banks x 1M x 32Bit Synchronous DRAM
HY5V22F-6I HYNIX

获取价格

Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90
HY5V22F-7 HYNIX

获取价格

4 Banks x 1M x 32Bit Synchronous DRAM
HY5V22F-8 HYNIX

获取价格

4 Banks x 1M x 32Bit Synchronous DRAM
HY5V22F-8I HYNIX

获取价格

Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90
HY5V22F-H HYNIX

获取价格

4 Banks x 1M x 32Bit Synchronous DRAM
HY5V22F-P HYNIX

获取价格

4 Banks x 1M x 32Bit Synchronous DRAM
HY5V22FP-5 HYNIX

获取价格

4 Banks x 1M x 32Bit Synchronous DRAM