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HY5DU121622DLT-HI PDF预览

HY5DU121622DLT-HI

更新时间: 2024-09-23 13:08:27
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器双倍数据速率
页数 文件大小 规格书
33页 371K
描述
DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

HY5DU121622DLT-HI 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSSOP,针数:66
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.32
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:0.75 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G66长度:22.22 mm
内存密度:536870912 bit内存集成电路类型:DDR DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:66
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.194 mm自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

HY5DU121622DLT-HI 数据手册

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HY5DU12422A(L)T  
HY5DU12822A(L)T  
HY5DU121622A(L)T  
512Mb DDR SDRAM  
HY5DU12422A(L)T  
HY5DU12822A(L)T  
HY5DU121622A(L)T  
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume  
any responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.0/Feb. 2003  
1

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