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HY57V651620BLTC-P PDF预览

HY57V651620BLTC-P

更新时间: 2024-11-19 23:57:11
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
12页 92K
描述
x16 SDRAM

HY57V651620BLTC-P 数据手册

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HY57V651620B  
4 Banks x 1M x 16Bit Synchronous DRAM  
DESCRIPTION  
The Hyundai HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which  
require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.  
HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro-  
nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output  
voltage levels are compatible with LVTTL.  
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated  
by a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of  
read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst  
read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)  
FEATURES  
Note)  
Auto refresh and self refresh  
Single 3.3±0.3V power supply  
4096 refresh cycles / 64ms  
All device pins are compatible with LVTTL interface  
Programmable Burst Length and Burst Type  
- 1, 2, 4, 8 or Full page for Sequential Burst  
- 1, 2, 4 or 8 for Interleave Burst  
JEDEC standard 400mil 54pin TSOP-II with 0.8mm  
of pin pitch  
All inputs and outputs referenced to positive edge of  
system clock  
Programmable CAS Latency ; 2, 3 Clocks  
Data mask function by UDQM or LDQM  
Internal four banks operation  
ORDERING INFORMATION  
Part No.  
Clock Frequency  
Power  
Organization  
Interface  
Package  
HY57V651620BTC-55  
HY57V651620BTC-6  
HY57V651620BTC-7  
HY57V651620BTC-75  
HY57V651620BTC-8  
HY57V651620BTC-10P  
HY57V651620BTC-10S  
HY57V651620BTC-10  
HY57V651620BLTC-55  
HY57V651620BLTC-6  
HY57V651620BLTC-7  
HY57V651620BLTC-75  
HY57V651620BLTC-8  
HY57V651620BLTC-P  
HY57V651620BLTC-S  
HY57V651620BLTC-10  
183MHz  
166MHz  
143MHz  
133MHz  
125MHz  
100MHz  
100MHz  
100MHz  
183MHz  
166MHz  
143MHz  
133MHz  
125MHz  
100MHz  
100MHz  
100MHz  
Normal  
4Banks x 1Mbits  
x16  
400mil 54pin TSOP II  
LVTTL  
Low power  
Note : VDD(Min) of HY57V651620B(L)TC-55/6/7 is 3.135V  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of  
circuits described. No patent licenses are implied.  
Rev. 1.8/Mar.01  

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