HY29LV160TT-12I

更新时间： 2024-02-28 07:32:30

品牌	Logo	应用领域
海力士 - HYNIX		闪存
页数	文件大小	规格书
48页	516K
描述
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

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数据手册

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HY29LV160TT-12I 数据手册

HY29LV160

16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

KEY FEATURES

n Single Power Supply Operation

n 100,000 Write Cycles per Sector Minimum

– Read, program and erase operations from

2.7 to 3.6 volts

– Ideal for battery-powered applications

n High Performance

n Data# Polling and Toggle Bits

– Provide software confirmation of

completion of program and erase

operations

– 70, 80, 90 and 120 ns access time

versions

n Ultra-low Power Consumption (Typical

Values At 5 Mhz)

n Ready/Busy# Pin

– Provides hardware confirmation of

completion of program and erase

operations

– Automatic sleep mode current: 1 µA

– Standby mode current: 1 µA

– Read current: 9 mA

n Hardware Reset Pin (RESET#) Resets the

Device to Reading Array Data

n Compliant With Common Flash Memory

Interface (CFI) Specification

– Program/erase current: 20 mA

n Flexible Sector Architecture:

– One 16 KB, two 8 KB, one 32 KB and

thirty-one 64 KB sectors in byte mode

– One 8 KW, two 4 KW, one 16 KW and

thirty-one 32 KW sectors in word mode

– Top or bottom boot block configurations

available

– Flash device parameters stored directly

on the device

– Allows software driver to identify and use

a variety of different current and future

Flash products

n Compatible With JEDEC standards

– Pinout and software compatible with

single-power supply Flash devices

– Superior inadvertent write protection

n Space Efficient Packaging

– 48-pin TSOP and 48-ball FBGA packages

n Sector Protection

– Allows locking of a sector or sectors to

prevent program or erase operations

within that sector

– Sectors lockable in-system or via

programming equipment

– Temporary Sector Unprotect allows

changes in locked sectors (requires high

voltage on RESET# pin)

LOGIC DIAGRAM

n Fast Program and Erase Times

– Sector erase time: 0.25 sec typical for

each sector

– Chip erase time: 8 sec typical

– Byte program time: 9 µs typical

n Unlock Bypass Program Command

– Reduces programming time when issuing

multiple program command sequences

n Automatic Erase Algorithm Preprograms

and Erases Any Combination of Sectors

or the Entire Chip

n Erase Suspend/Erase Resume

– Suspends an erase operation to allow

reading data from, or programming data

to, a sector that is not being erased

– Erase Resume can then be invoked to

complete suspended erasure

A[19:0]

CE#

DQ[7:0]

DQ[14:8]

OE#

DQ15/A-1

RY/BY#

W E #

RESET#

BYTE#

n Automatic Program Algorithm Writes and

Verifies Data at Specified Addresses

Preliminary

Revision 1.2, May 2001

12 3 4 5 6 7...48

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