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HY29F040AT-90I PDF预览

HY29F040AT-90I

更新时间： 2024-11-05 04:44:03
品牌 Logo 应用领域
海力士 - HYNIX 闪存
页数 文件大小 规格书
40页 284K
描述
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

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中文翻译

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HY29F040AT-90I 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：TSOP1, TSSOP32,.8,20
针数：32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.38最长访问时间：90 ns
其他特性：MINIMUM 100000 PROGRAM/ERASE CYCLES命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G32JESD-609代码：e0
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：8
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP32,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：64K最大待机电流：0.001 A
子类别：Flash Memories最大压摆率：0.06 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：8 mm
Base Number Matches：1

HY29F040AT-90I 数据手册

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HY29F040A Series  
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory  
KEY FEATURES  
·
·
·
Internal Erase Algorithms  
·
·
·
5.0 V ± 10% Read, Program, and Erase  
Minimizes system-level power requirements  
High performance  
55 ns access time  
Compatible with JEDEC-Standard Commands  
-
Automatically erases a sector, any combination  
of sectors, or the entire chip  
-
Internal Programming Algorithms  
-
-
Automatically programs and verifies data at a  
specified address.  
-
Uses software commands, pinouts, and  
packages following industry standards for  
single power supply Flash memory  
Low Power Consumption  
-
-
-
40 mA maximum active read current  
60 mA maximum program/erase current  
5 mA maximum standby current  
·
·
Minimum 100,000 Program/Erase Cycles  
Sector Erase Architecture  
-
-
Eight equal size sectors of 64K bytes each  
Any combination of sectors can be erased  
concurrently; also supports full chip erase  
·
Sector Protection  
-
Hardware method disables any combination  
of sectors from a program or erase operation  
·
Erase Suspend/Resume  
-
Suspend a sector erase operation to allow a  
data read or programming in a sector not  
being erased within the same device  
DESCRIPTION  
The HY29F040A is programmed by executing the  
program command sequence. This will start the  
internal byte programming algorithm that  
automatically times the program pulse width and  
also verifies the proper cell margin. Erase is  
accomplished by executing either sector erase or  
chip erase command sequence. This will start the  
internal erasing algorithm that automatically times  
the erase pulse width and also verifies the proper  
cell margin. No preprogramming is required prior to  
execution of the internal erase algorithm. Sectors  
of the HY29F040A Flash memory array are electri-  
cally erased via Fowler-Nordheim tunneling. Bytes  
are programmed one byte at a time using a hot  
electron injection mechanism.  
The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS  
Flash memory device organized as a 512K bytes  
of 8 bits each. The device is offered in standard  
32-pin PDIP, 32-pin PLCC and 32-pin TSOP pack-  
ages. It is designed to be programmed and  
erased in-system with a 5.0 volt power-supply and  
can also be reprogrammed in standard PROM  
programmers.  
The HY29F040A offers access times of 55 ns, 70  
ns, 90 ns, 120 ns and 150 ns. The device has sepa-  
rate chip enable (/CE), write enable (/WE) and out-  
put enable (/OE) controls. Hyundai Flash memory  
devices reliably store memory data even after  
100,000 program/erase cycles.  
The HY29F040A features a sector erase architecture.  
The device memory array is divided into 8 sectors of  
64K bytes each. The sectors can be erased indi-  
vidually or in groups without affecting the data in  
other sectors. The multiple sector erase and full  
chip erase capabilities add flexibility to altering the  
data in the device. To protect data in the device  
from accidental program and erase, the device  
also has a sector protect function. This function  
hardwarewriteprotectstheselectedsectors.The sector  
The HY29F040A is entirely pin and command set  
compatible with the JEDEC standard for 4 Mega-  
bit Flash memory devices. The commands arewrit-  
tentothecommandregisterusingstandardmicropro-  
cessor write timings. Register contents serve as  
input to an internal state-machine which controls  
the erase and programming circuitry. Write cycles  
also internally latch addresses and data needed  
for the programming and erase operations.  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licences are implied.  
Rev.03/Aug.97  
Hyundai Semiconductor  
1234567...40

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