Datasheet > 存储 > 闪存> HY29F040AC-70I

HY29F040AC-70I

更新时间： 2024-09-09 04:03:31

品牌	Logo	应用领域
海力士 - HYNIX		闪存存储内存集成电路
页数	文件大小	规格书
40页	284K
描述
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

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HY29F040AC-70I 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFJ	包装说明：	QCCJ, LDCC32,.5X.6
针数：	32	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.49	Is Samacsys：	N
最长访问时间：	70 ns	其他特性：	MINIMUM 100000 PROGRAM/ERASE CYCLES
命令用户界面：	YES	数据轮询：	YES
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PQCC-J32
JESD-609代码：	e0	长度：	13.97 mm
内存密度：	4194304 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
部门数/规模：	8	端子数量：	32
字数：	524288 words	字数代码：	512000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	512KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	QCCJ
封装等效代码：	LDCC32,.5X.6	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	5 V
编程电压：	5 V	认证状态：	Not Qualified
座面最大高度：	3.556 mm	部门规模：	64K
最大待机电流：	0.001 A	子类别：	Flash Memories
最大压摆率：	0.06 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	J BEND	端子节距：	1.27 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	YES	类型：	NOR TYPE
宽度：	11.43 mm	Base Number Matches：	1

HY29F040AC-70I 数据手册

HY29F040A Series

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

KEY FEATURES

Internal Erase Algorithms

5.0 V ± 10% Read, Program, and Erase

Minimizes system-level power requirements

High performance

55 ns access time

Compatible with JEDEC-Standard Commands

Automatically erases a sector, any combination

of sectors, or the entire chip

Internal Programming Algorithms

Automatically programs and verifies data at a

specified address.

Uses software commands, pinouts, and

packages following industry standards for

single power supply Flash memory

Low Power Consumption

40 mA maximum active read current

60 mA maximum program/erase current

5 mA maximum standby current

Minimum 100,000 Program/Erase Cycles

Sector Erase Architecture

Eight equal size sectors of 64K bytes each

Any combination of sectors can be erased

concurrently; also supports full chip erase

Sector Protection

Hardware method disables any combination

of sectors from a program or erase operation

Erase Suspend/Resume

Suspend a sector erase operation to allow a

data read or programming in a sector not

being erased within the same device

DESCRIPTION

The HY29F040A is programmed by executing the

program command sequence. This will start the

internal byte programming algorithm that

automatically times the program pulse width and

also verifies the proper cell margin. Erase is

accomplished by executing either sector erase or

chip erase command sequence. This will start the

internal erasing algorithm that automatically times

the erase pulse width and also verifies the proper

cell margin. No preprogramming is required prior to

execution of the internal erase algorithm. Sectors

of the HY29F040A Flash memory array are electri-

cally erased via Fowler-Nordheim tunneling. Bytes

are programmed one byte at a time using a hot

electron injection mechanism.

The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS

Flash memory device organized as a 512K bytes

of 8 bits each. The device is offered in standard

32-pin PDIP, 32-pin PLCC and 32-pin TSOP pack-

ages. It is designed to be programmed and

erased in-system with a 5.0 volt power-supply and

can also be reprogrammed in standard PROM

programmers.

The HY29F040A offers access times of 55 ns, 70

ns, 90 ns, 120 ns and 150 ns. The device has sepa-

rate chip enable (/CE), write enable (/WE) and out-

put enable (/OE) controls. Hyundai Flash memory

devices reliably store memory data even after

100,000 program/erase cycles.

The HY29F040A features a sector erase architecture.

The device memory array is divided into 8 sectors of

64K bytes each. The sectors can be erased indi-

vidually or in groups without affecting the data in

other sectors. The multiple sector erase and full

chip erase capabilities add flexibility to altering the

data in the device. To protect data in the device

from accidental program and erase, the device

also has a sector protect function. This function

hardwarewriteprotectstheselectedsectors.The sector

The HY29F040A is entirely pin and command set

compatible with the JEDEC standard for 4 Mega-

bit Flash memory devices. The commands arewrit-

tentothecommandregisterusingstandardmicropro-

cessor write timings. Register contents serve as

input to an internal state-machine which controls

the erase and programming circuitry. Write cycles

also internally latch addresses and data needed

for the programming and erase operations.

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licences are implied.

Rev.03/Aug.97

Hyundai Semiconductor

12 3 4 5 6 7...40

中文翻译

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与HY29F040AC-70I相关器件

型号	品牌	获取价格	描述	数据表
HY29F040AC-90	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AC-90E	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AC-90I	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AP-12	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AP-12E	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AP-12I	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AP-15	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AP-15E	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AP-15I	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AP-55	HYNIX	获取价格	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

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