5秒后页面跳转
捷配首页

Datasheet > 存储 > 闪存> HY29DS163TF-13I
HY29DS163TF-13I PDF预览

HY29DS163TF-13I

更新时间： 2024-11-01 04:44:03
品牌 Logo 应用领域
海力士 - HYNIX 闪存存储内存集成电路
页数 文件大小 规格书
48页 546K
描述
16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

阅读下载

中文翻译

获取价格

HY29DS163TF-13I 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：8 X 9 MM, FBGA-48
针数：48Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.92Is Samacsys：N
最长访问时间：130 ns备用内存宽度：8
启动块：TOP命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48JESD-609代码：e0
长度：9 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：8,31
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA48,6X8,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：2 V编程电压：1.8 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.2 mm部门规模：8K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.024 mA最大供电电压 (Vsup)：2.2 V
最小供电电压 (Vsup)：1.8 V标称供电电压 (Vsup)：2 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
宽度：8 mmBase Number Matches：1

HY29DS163TF-13I 数据手册

 浏览型号HY29DS163TF-13I的Datasheet PDF文件第2页浏览型号HY29DS163TF-13I的Datasheet PDF文件第3页浏览型号HY29DS163TF-13I的Datasheet PDF文件第4页浏览型号HY29DS163TF-13I的Datasheet PDF文件第5页浏览型号HY29DS163TF-13I的Datasheet PDF文件第6页浏览型号HY29DS163TF-13I的Datasheet PDF文件第7页 
HY29DS162/HY29DS163  
16 Megabit (2M x 8/1M x 16) Super-Low Voltage,  
Dual Bank, Simultaneous Read/Write, Flash Memory  
KEY FEATURES  
n Data# Polling and Toggle Bits  
n Single Power Supply Operation  
− Read, program, and erase operations  
from 1.8 to 2.2 V (2.0V ± 10%)  
− Provide software confirmation of completion  
of program or erase operations  
n Ready/Busy# Pin  
− Ideal for battery-powered applications  
n Simultaneous Read/Write Operations  
− Host system can program or erase in one  
bank while simultaneously reading from any  
sector in the other bank with zero latency  
between read and write operations  
− Provides hardware confirmation of  
completion of program or erase operations  
n Erase Suspend  
− Suspends an erase operation to allow  
programming data to or reading data from  
a sector in the same bank  
n High Performance  
− Erase Resume can then be invoked to  
complete the suspended erasure  
n Hardware Reset Pin (RESET#) Resets the  
Device to Reading Array Data  
− 120 and 130 ns access time versions with  
± 10% power supply and 30pF load  
n Ultra Low Power Consumption (Typical  
Values)  
n WP#/ACC Input Pin  
− Automatic sleep mode current: 200 nA  
− Write protect (WP#) function allows  
hardware protection of two outermost boot  
sectors, regardless of sector protect status  
− Acceleration (ACC) function provides  
accelerated program times  
− Standby mode current: 200 nA  
− Read current: 5 mA (at 5 MHz)  
− Program/erase current: 15 mA  
n Boot-Block Sector Architecture with 39  
Sectors in Two Banks for Fast In-System  
Code Changes  
n Fast Program and Erase Times  
− Sector erase time: 1 sec typical  
− Byte/Word program time utilizing  
Acceleration function: 13 µs typical  
n Space Efficient Packaging  
n Secured Sector: An Extra 64 Kbyte Sector  
that Can Be:  
− Factory locked and identifiable: 16 bytes  
available for a secure, random factory-  
programmed Electronic Serial Number  
− Customer lockable: Can be read, program-  
med, or erased just like other sectors  
n Flexible Sector Architecture  
− 48-pin TSOP and 48-ball FBGA packages  
LOGIC DIAGRAM  
− Sector Protection allows locking of a  
sector or sectors to prevent program or  
erase operations within that sector  
− Temporary Sector Unprotect allows  
changes in locked sectors (requires high  
voltage on RESET# pin)  
20  
8
7
A[19:0]  
CE#  
DQ[7:0]  
n Automatic Erase Algorithm Erases Any  
Combination of Sectors or the Entire Chip  
n Automatic Program Algorithm Writes and  
Verifies Data at Specified Addresses  
n Compliant with Common Flash Memory  
Interface (CFI) Specification  
n Minimum 100,000 Write Cycles per Sector  
(1,000,000 cycles Typical)  
n Compatible with JEDEC Standards  
− Pinout and software compatible with  
single-power supply Flash devices  
− Superior inadvertent write protection  
DQ[14:8]  
DQ[15]/A[-1]  
WP#/ACC  
RY/BY#  
OE#  
W E#  
RESET#  
BYTE#  
Preliminary  
Revision 1.3, April 2001  
1234567...48

中文翻译

下载PDF

与HY29DS163TF-13I相关器件

型号 品牌 获取价格 描述 数据表
HY29DS163TT-12 HYNIX

获取价格

 		16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163TT-12I HYNIX

获取价格

 		16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163TT-13 HYNIX

获取价格

 		16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS163TT-13I HYNIX

获取价格

 		16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash M
HY29DS322 HYNIX

获取价格

 		32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Me
HY29DS322BF-10 ETC

获取价格

 		EEPROM
HY29DS322BF-11 ETC

获取价格

 		EEPROM
HY29DS322BF-12 ETC

获取价格

 		EEPROM
HY29DS322BT-10 ETC

获取价格

 		EEPROM
HY29DS322BT-11 ETC

获取价格

 		EEPROM

与HY29DS163TF-13I相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证