Datasheet > 存储 > 闪存> HY27SF081G2M-TPIP

HY27SF081G2M-TPIP

更新时间： 2024-11-04 22:48:27

品牌	Logo	应用领域
海力士 - HYNIX		闪存
页数	文件大小	规格书
48页	477K
描述
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HY27SF081G2M-TPIP 数据手册

浏览型号HY27SF081G2M-TPIP的Datasheet PDF文件第2页

浏览型号HY27SF081G2M-TPIP的Datasheet PDF文件第3页

浏览型号HY27SF081G2M-TPIP的Datasheet PDF文件第4页

浏览型号HY27SF081G2M-TPIP的Datasheet PDF文件第5页

浏览型号HY27SF081G2M-TPIP的Datasheet PDF文件第6页

浏览型号HY27SF081G2M-TPIP的Datasheet PDF文件第7页

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Document Title

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Revision History

Revision

History

No.

Draft Date Remark

0.0

1) Initial Draft.

Aug. 2004

Preliminary

1) Correct Fig.10 Sequential out cycle after read

2) Add the text to Fig.1, Table.1, Table.2

- text : IO15 - IO8 (x16 only)

3) Delete ‘3.2 Page program NOTE 1.

- Note : if possible it is better to remove this constrain

4) Change the text ( page 10,13, 45)

0.1

Sep. 2004

Preliminary

- 2.2 Address Input : 28 Addresses -> 27 Addresses

- 3.7 Reset : Fig.29 -> Fig.30

- 5.1 Automatic page read after power up : Fig.30 -> Fig.29

5) Add 5.3 Addressing for program operation & Fig.34

1) Change TSOP, WSOP, FBGA package dimension & figures.

- Change TSOP, WSOP, FBGA package mechanical data

- Change FBGA thickness (1.2 -> 1.0 mm)

2) Correct TSOP, WSOP Pin configurations.

- 38th NC pin has been changed Lockpre(figure 3,4)

3) Edit figure 15,19 & table 4

0.2

Oct. 2004

Preliminary

4) Add Bad Block Management

5) Change Device Identifier 3rd Byte

- 3rd Byte ID is changed. (reserved -> don't care)

- 3rd Byte ID table is deleted.

1) Add Errata

tCLS tCLH tWP tALS tALH tDS

tWC

Specification

Relaxed value

2) LOCKPRE is changed to PRE.

- Texts, Table, Figures are changed.

3) Add Note.4 (table.14)

0.3

Nov.29 2004 Preliminary

4) Block Lock Mechanism is deleted.

- Texts, Table, figures are deleted.

5) Add Application Note(Power-On/Off Sequence & Auto Sleep mode.)

- Texts & Figures are added.

6) Edit the figures. (#10~25)

1) Change AC characteristics(tREH)

before: 20ns -> after: 30ns

0.4

2) Edit Note.1 (page. 21)

Jan.19 2005 Preliminary

3) Edit the Application note 1,2

4) Edit The Address cycle map (x8, x16)

Rev 0.7 / Apr. 2005

12 3 4 5 6 7...48

中文翻译

下载PDF

与HY27SF081G2M-TPIP相关器件

型号	品牌	获取价格	描述	数据表
HY27SF081G2M-TPIS	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPMB	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPMP	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPMS	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-V	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-VCB	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-VCP	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-VCS	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-VEB	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-VEP	HYNIX	获取价格	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory