生命周期: | Obsolete | 零件包装代码: | TSOP2 |
包装说明: | TSOP2, TSOP44,.46,32 | 针数: | 44 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.84 |
最长访问时间: | 120 ns | 备用内存宽度: | 8 |
JESD-30 代码: | R-PDSO-G44 | JESD-609代码: | e6 |
长度: | 18.41 mm | 内存密度: | 33554432 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 44 |
字数: | 2097152 words | 字数代码: | 2000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 2MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装等效代码: | TSOP44,.46,32 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.00005 A |
子类别: | MASK ROMs | 最大压摆率: | 0.035 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY23V32200T-70 | HYNIX |
获取价格 |
MASK ROM, 2MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | |
HY23V64100D | HYNIX |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | |
HY23V64100D-100 | HYNIX |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | |
HY23V64200F-100 | HYNIX |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | |
HY23V64200F-120 | HYNIX |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | |
HY23V64200M-120 | HYNIX |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48 | |
HY23V64200S-100 | HYNIX |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.500 INCH, PLASTIC, SOP-44 | |
HY23V64200T-100 | HYNIX |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | |
HY23V64200T-120 | HYNIX |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 | |
HY23W04000D | HYNIX |
获取价格 |
MASK ROM, 512KX8, 120ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 |