型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HY030N06C2 | HUAYI |
获取价格 |
此器件为 65V、2.4mΩ、PDFN8L(5x6)封装产品,采用SGT流片工艺,该器件适 | |
HY030N06P | HUAYI |
获取价格 |
此器件为 65V、2.4mΩ、TO-220FB-3L封装产品,采用SGT流片工艺,该器件适 | |
HY04002000J0G | AMPHENOL |
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Barrier Strip Terminal Block | |
HY05005000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HY05006000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HY0500C000J0G | AMPHENOL |
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Barrier Strip Terminal Block | |
HY05-P/SP1 | LEM |
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Current Transducers HY 5 to 25-P/SP1 | |
HY060N08B | HUAYI |
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N-Channel Enhancement Mode MOSFET | |
HY060N08M | HUAYI |
获取价格 |
N-Channel Enhancement Mode MOSFET | |
HY060N08MF | HUAYI |
获取价格 |
N-Channel Enhancement Mode MOSFET |