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2W01M PDF预览

2W01M

更新时间: 2024-02-21 08:17:46
品牌 Logo 应用领域
虹扬 - HY 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 99K
描述
SILICON BRIDGE RECTIFIERS

2W01M 技术参数

生命周期:Active包装说明:O-PBCY-W4
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.61Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:O-PBCY-W4
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
Base Number Matches:1

2W01M 数据手册

 浏览型号2W01M的Datasheet PDF文件第2页 
2WO/2WOM SERIES  
REVERSE VOLTAGE - 50 to 1000Volts  
FORWARD CURRENT - 2.0 Amperes  
SILICON BRIDGE RECTIFIERS  
WOB  
WOBM  
.366(9.3)  
.350(8.9)  
.386(9.8)  
.354(9.0)  
FEATURES  
.220(5.6)  
.200(5.1)  
Surge overload rating -60 amperes peak  
Ideal for printed circuit board  
.181(4.6)  
.150(3.8)  
Reliable low cost construction utilizing molded plastic  
technique results in expensive product  
Mounting position:Any  
1.1  
(27.9)  
MIN  
1.0  
(25.4)  
MIN  
1.0  
(25.4)  
MIN  
1.1  
(27.9)  
MIN  
Lead: Sliver plated copper lead  
.032(0.81)  
.028(0.71)  
.032(0.81)  
.028(0.71)  
POS.  
LEAD  
POS.  
LEAD  
.220(5.6)  
.180(4.6)  
.220(5.6)  
.180(4.6)  
.220(5.6)  
.180(4.6)  
.220(5.6)  
.180(4.6)  
SPACING  
SPACING  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
2W005  
2W01  
2W02  
2W04  
2W06  
2W08  
2W10  
SYMBOL  
UNIT  
CHARACTERISTICS  
2W005M 2W01M 2W02M 2W04M 2W06M 2W08M 2W10M  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
I(AV)  
2.0  
A
0.375″(9.5mm) Lead Lengths  
Peak Forward Surge Current ,  
@TA=25 ℃  
IFSM  
60  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
I2t Rating for Fusing (t8.3ms)  
Maximum Forward Voltage Drop  
Per Element at 2.0A Peak  
I2t  
A2s  
V
15.0  
1.1  
VF  
Maximum DC Reverse Current at Rated  
DC Blocking Voltage  
TJ=25℃  
TJ=100℃  
10.0  
1.0  
30  
μA  
IR  
mA  
Typical Junction Capacitance Per Element (Note1)  
Operating Temperature Range  
CJ  
TJ  
pF  
-55 to +125  
-55 to +150  
Storage Temperature Range  
TSTG  
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
~ 312 ~  

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