Datasheet > HX128M

HX128M

更新时间： 2024-01-21 03:21:36

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	242K
描述
PNP SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HX128M 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HX128M

█ APPLICATIONS

Suitable For Low Voltage Large Current Drivers.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92S

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 400mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 20V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 15V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 6.5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1.5A

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

I_C=50μA, I_E=0

I_C=1mA, I_B=0

6.5

150

I_E=50μA，I_C=0

V_CE=1V, I_C=100mA

I_C=500mA, I_B=50mA

V_CB=20V, I_E=0

HFE

DC Current Gain

VCE(sat) Collector- Emitter Saturation Voltage

0.2 0.3 V

0.1 μA

ICBO

IEBO

Collector Cut-off Current

Emitter Cut-off Current

Current Gain-Bandwidth Product

Output Capacitance

On Resistance

V_EB=6V, I_C=0

0.1 μA

260

MHz

V_CE=5V, I_C=50mA

V_CB=10V, I_E=0，f=1MHz

Cob

Ron

0.6

Ω VIN=0.3V,f=1KHz，I_B=1mA

中文翻译

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