Datasheet > HX1267

HX1267

更新时间： 2024-01-30 09:59:03

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	517K
描述
PNP SILICON TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HX1267 数据手册

PN P S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HX1267

█ APPLICATIONS

Switching Applications.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 400mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -150mA

I_E— — Emitte Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150mA

TO-92S

1―Emitter，E

2―Collector,C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

IEBO

ICBO

Emitter Cut-off Current

Collector Cut-off Current

V_EB=-5V, I_C=0

-0.1 μA

V_CB=-50V, I_E=0

VCE(sat) Collector- Emitter Saturation Voltage

I_C=-100mA, I_B=-10mA

V_CE=-6V, I_C=-2mA

V_CE=-10V,I_C=-1mA

-0.1 -0.3 V

400

HFE

DC Current Gain

Current Gain-Bandwidth Product

Output Capacitance

MHz

Cob

4.0 7.0 pF V_CB=-10V, I_E=0，f=1MHz

V_CE=-6V, I_C=-0.1mA

1.0 10 dB

Noise Figure

f=1KHz,Rg=10KΩ

█ hFE Classification

70— 140

120— 240

200— 400

中文翻译

下载PDF

与HX1267相关器件

型号	品牌	获取价格	描述	数据表
HX128M	HUASHAN	获取价格	PNP SILICON TRANSISTOR
HX1294	PULSE	获取价格	LAN DISCRETE TRANSFORMER MODULES
HX1294NL	PULSE	获取价格	10/100BASE-TX DUAL PORT TRANSFORMER MODULES
HX13019000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HX1305NL	PULSE	获取价格	Star Magneticsâ¢ 10/100BASE-T Transformer Mo
HX13212100J0G	AMPHENOL	获取价格	暂无描述
HX13230100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HX13235100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HX1323C100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HX14213100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block