Datasheet > HVC136

HVC136

更新时间： 2024-09-22 12:04:59

品牌	Logo	应用领域
TYSEMI		二极管开关光电二极管
页数	文件大小	规格书
1页	56K
描述
Adopting the trench structure improves low capacitance

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中文翻译

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HVC136 数据手册

Product specification

HVC136

SOD-523

Unit: mm

0.6

+0.1

-0.1

+0.1

-0.1

1.2

Features

Adopting the trench structure improves low capacitance.(C = 0.45 pF max)

Low forward resistance. (rf=2.5 max)

+0.1

-0.1

1.6

0.77max

Low operation current.

Absolute M axim um R atings T a = 25

P aram eter

P eak reverse voltage

R everse voltage

S ym bol

V ^{R M}

V ^R

V alue

U nit

Forward current

I^F

100

m A

m W

P ower dissipation

Junction tem perature

S torage tem perature

P ^d

150

T^j

125

T^stg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Reverse current

Reverse voltage

Capacitance

Symbol

Conditions

Min

Typ

Max

0.1

Unit

I^R

V^F

V^R= 60 V

I^F= 2 mA

0.9

V^R= 1 V, f = 1 MHz

I^F= 2 mA, f = 100 MHz

0.45

2.5

Forward resistance

r^f

C =200pF, Both forward and

reverse direction 1 pulse

ESD-Capability *1

100

Note

1. Failure criterion ; I^R> 100 nA at V^R= 60V.

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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