Datasheet > HV500F08_16

HV500F08_16

更新时间： 2024-09-22 01:14:11

品牌	Logo	应用领域
HVGT		高压
页数	文件大小	规格书
1页	68K
描述
500mA 8kV HIGH VOLTAGE DIODES

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中文翻译

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数据手册

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HV500F08_16 数据手册

HVGT

HV500F08

500mA 8kV HIGH VOLTAGE DIODES

Outline Drawings : mm

Finds use in applications such as Monitors,

Static electricity dust collectors,Laser power

supplies,ect..

Cathode Mark

o 7.0

Lot No.

o 1.28

Features

High speed switching

High Current

24 min.

High surge resisitivity for CRT discharge

High reliability design

High Voltage

DO-721

Cathode Mark

Applications

X light Power supply

Laser

Type

Mark

Voltage doubler circuit

Microwave emission power

HVGT

HV500F08

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Symbols

V_RRM

I_O

Items

Condition

HV500F08

Units

8.0

Repetitive Peak Renerse Voltage

Average Output Current

Suege Current

500

Ta=25°C,Resistive Load

I_FSM

peak

120

Junction Temperature

°C

120

Allowable Operation Case Temperature

Storage Temperature

T^stg

-40 to +120

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Items

Symbols

V^F

HV500F08

Conditions

Units

Maximum Forward Voltage Drop

Maximum Reverse Current

at 25°C,I_{F =IF(AV)}

at 25°C,V^R=VRRM

IR1

5.0

IR2

at 100°C,V

RRM

Maximum Reverse Recovery Time

Junction Capacitance

Trr

at 25°C

100

at 25°C,VR=0V,f=1MHz

GETE ELECTRONICS CO.,LTD

Http://www.getedz.com E-mail:sales@getedz.com

2014

中文翻译

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