Datasheet > HV10G18

HV10G18

更新时间： 2024-02-06 13:21:38

品牌	Logo	应用领域
HVGT		高压
页数	文件大小	规格书
2页	351K
描述
10mA 18kV 100nS-HIGH VOLTAGE DIODE

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中文翻译

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数据手册

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HV10G18 数据手册

HV10G148

10mA 18kV 100nS-HIGH VOLTAGE DIODE

High reliability resin molded type high voltage

diode

Outline Drawings :

in small size package which is sealed a multilayed

mesa type silicon chip by epoxy resin.

Features

High speed switching

Epoxy resin molded in vacuum,

Have anticorrosion in the surface

High surge resisitivity for CRT discharge

High reliability design

Avalanche characteristic

Applications

X light Power supply

Laser

DO-312 Series

Lead Diameter 0.5mm

Voltage doubler circuit

Microwave emission power

3.0mm

General purpose high voltage rectifier,

Voltage multiplier assembly.

12mm

25mm

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Symbols

V_RRM

I_O

Items

Condition

Units

HV10G18

Repetitive Peak Renerse Voltage

Average Output Current

Suege Current

Ta=25°C,

Ta=25°C,Resistive Load

Ta=25°C,8.3 ms

I_FSM

1.0

125

peak

Junction Temperature

°C

Allowable Operation Case Temperature

Storage Temperature

125

T^stg

-40 to +125

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Items

Symbols

V^F

HV10G18

Conditions

at 25°C,I_{F =IF(AV)}

Units

Maximum Forward Voltage Drop

Maximum Reverse Current

IR1

at 25°C,V^R=VRRM

2.0

5.0

IR2

at 100°C,V

RRM

Maximum Reverse Recovery Time

Junction Capacitance

Trr

at 25°C;

I^F=2mA; I^R=4mA; Irr =1mA;

100

at 25°C;V^R=0V,f=1MHz

1.0

sales@getedz.com

E-mail:

Tel: 0086-20-8184 9628

www.getedz.com

www.hvgtsemi.com

Fax: 0086-20-8184 9638

GETE ELECTRONIC CO.,LTD

GUANGZHOU * CHINA

4001 83 84 85

China Tel:

中文翻译

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