HUF75333P3

更新时间： 2024-11-26 03:57:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关局域网
页数	文件大小	规格书
10页	325K
描述
66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs

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替代型号

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HUF75333P3 数据手册

HUF75333G3, HUF75333P3, HUF75333S3S,

HUF75333S3

Data Sheet

December 2001

66A, 55V, 0.016 Ohm. N-Channel UltraFET

Power MOSFETs

Features

• 66A, 55V

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET® process. This

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Models

advanced process technology

- SPICE and SABER Thermal Impedance Models

Available on the WEB at: www.fairchildsemi.com

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching convertors, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products. .

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA75333

Ordering Information

Symbol

PART NUMBER

HUF75333G3

HUF75333P3

PACKAGE

BRAND

75333G

TO-247

TO-220AB

TO-263AB

TO-262AA

75333P

75333S

HUF75333S3S

HUF75333S3

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75333S3ST.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(TAB)

JEDEC TO-263AB

DRAIN

JEDEC TO-262ABA

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

SOURCE

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1

12 3 4 5 6 7...10

中文翻译

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HUF75333P3 替代型号

型号	品牌	替代类型	描述	数据表
HUF75337P3	FAIRCHILD	类似代替	75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
STP60NF06	STMICROELECTRONICS	功能相似	N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP55NF06	STMICROELECTRONICS	功能相似	N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220

与HUF75333P3相关器件

型号	品牌	获取价格	描述	数据表
HUF75333P3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 66A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
HUF75333P3_S2515	ROCHESTER	获取价格	Power Field-Effect Transistor
HUF75333S3	FAIRCHILD	获取价格	66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75333S3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 56A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
HUF75333S3S	INTERSIL	获取价格	66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75333S3S	FAIRCHILD	获取价格	66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75333S3ST	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 66A I(D) \| TO-263AB
HUF75333S3ST_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 66A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
HUF75337G3	INTERSIL	获取价格	75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
HUF75337G3	FAIRCHILD	获取价格	75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs

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