Datasheet > HU603AL

HU603AL

更新时间： 2024-11-11 22:33:43

品牌	Logo	应用领域
HSMC		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	63K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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技术参数
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HU603AL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HU603AL 数据手册

Spec. No. : Preliminary Data

Issued Date : 1998.07.01

Revised Date : 1999.08.01

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

HU603AL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

This very high density process has been especially tailored to minimize on-

state resistance and provide superior switching performance. These

devices are particularly suited for low voltage applications such as DC/DC

converters and other battery powered circuits where fast switching, low in-

line power loss, and resistance to transients are needed.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Operating and Storage Temperature................................................................................ -65 ~ +175 °C

• Maximum Power Dissipation

Total Power Dissipation at Tc=25°C ............................................................................................... 60 W

Derate Above 25°C................................................................................................................ 0.4 W / °C

• Maximum Voltages and Currents

Drain-Source Voltage...................................................................................................................... 30 V

Gate-Source Voltage -Continuous................................................................................................. ±20 V

Drain Current -Continuous .............................................................................................................. 30 A

Drain Current -Pulsed ................................................................................................................... 100 A

Thermal Resistance, Junction-to-Case .................................................................................. 2.5 °C / W

Thermal Resistance, Junction-to-Ambient............................................................................ 62.5 °C / W

Electrical Characteristics

• Off Characteristics

Symbol

BV_DSS

I_DSS

+I_GSS

-I_GSS

Parameter

Condition

V_GS=0V, I_D=250uA

V_DS=30V, V_GS=0V

V_GS=20V, V_DS=0V

V_GS=-20V, V_DS=0V

Min Typ Max Unit

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage ,Forward

Gate-Body Leakage ,Reverse

100 nA

-100 nA

• On Characteristics

V_DS=V_GS, I_D=250uA

V_DS=V_GS, I_D=10mA

V_GS=10V, I_D=25A

V_GS=4.5V, I_D=10A

V_GS=10V, V_DS=10V

V_GS=4.5V, V_DS=10V

V_DS=10V, I_D=25A

1.1

1.4

V_GS(TH)

Gate Threshold Voltage

0.018 0.022

0.029 0.040

R_DS(on) Static Drain-Source On-Resistance

I_DS(on) On-State Drain Current

Ω

g_FS

Forward Transconductance

• Dynamic Characteristic

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

1100

600

180

V_DS=15V, V_GS=0V

f=1.0Mhz

HSMC Product Specification

12 3 4 5

中文翻译

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与HU603AL相关器件

型号	品牌	获取价格	描述	数据表
HU60A00220KPY	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 17000V, P100, 100ppm/Cel TC, 0.000022uF
HU60A00220KWH	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 17000V, P100, 100ppm/Cel TC, 0.000022uF
HU60A00220MPY	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 17000V, P100, 100ppm/Cel TC, 0.000022uF
HU60A00220ZPY	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 17000V, P100, 100ppm/Cel TC, 0.000022uF
HU60A00330ZPY	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 10000V, P100, 100ppm/Cel TC, 0.000033uF
HU60A00360M	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 10000V, P100, 100ppm/Cel TC, 0.000036uF
HU60A00470ZWH	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 10000V, P100, 100ppm/Cel TC, 0.000047uF
HU60H00101MPY	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 10000V, N33, -33% TC, 0.0001uF
HU60H00470KPY	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 17000V, N33, -33% TC, 0.000047uF
HU60H00910MPY	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 10000V, N33, -33% TC, 0.000091uF

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