Datasheet > HTP8A60

HTP8A60

更新时间： 2022-12-18 00:51:31

品牌	Logo	应用领域
华汕 - HUASHAN		可控硅三端双向交流开关
页数	文件大小	规格书
3页	193K
描述
NON INSULATED TYPE TRIAC (TO-220 PACKAGE)

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HTP8A60 数据手册

Shantou Huashan Electronic Devices Co.,Ltd.

HTP8A60

NON INSULATED TYPE TRIAC (TO-220 PACKAGE)

█ Features

* Repetitive Peak Off-State Voltage: 600V

* R.M.S On-state Current(I_T(RMS)=8A)

* High Commutation dv/dt

█ General Description

The Triac HTP8A60 is suitable for AC switching application, phase

control application such as heater control, motor control, lighting control,

and static switching relay.

█ Absolute Maximum Ratings（T_a=25℃）

T_stg——Storage Temperature

- 40~125℃

T_j——Operating Junction Temperature

_GM——Peak Gate Power Dissipation

_DRM——Repetitive Peak Off-State Voltage

IT（RMS）——R.M.S On-State Current（Ta=105℃）

_GM——Peak Gate Voltage

_{G M}——Peak Gate Current

600V

10V

2.0A

ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)

80/88A

█ Electrical Characteristics（T_a=25℃）

Symbol

Items

Min. Typ. Max. Unit

Conditions

I_DRM

Repetitive Peak Off-State Current

2.0

mA V_D=V_DRM, Single Phase,Half

Wave, T_J=125℃

Peak On-State Voltage

I_T=12A, Inst. Measurement

V_TM

1.4

Gate Trigger Current（Ⅰ）

I+_GT1

mA V_D=6V, R_L=10 ohm

Gate Trigger Current（Ⅱ）

Gate Trigger Current（Ⅲ）

Gate Trigger Voltage（Ⅰ）

Gate Trigger Voltage（Ⅱ）

I- _GT1

I-_GT3

mA V_D=6V, R_L=10 ohm

V+ _GT1

V- _GT1

V- _GT3

V_GD

1.5

V_D=6V, R_L=10 ohm

T_J=125℃,V_D=1/2V_DRM

Gate Trigger Voltage（Ⅲ）

Non-Trigger Gate Voltage

Critical Rate of Rise of Off-State

Voltage at Commutation

0.2

(dv/dt)c

V/µS T_J=125℃,V_D=2/3V_DRM

(di/dt)c=-4A/ms

Holding Current

I_H

Thermal Resistance

Junction to case

Rth(j-c)

2.0

℃/W

12 3

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