Spec. No. : Preliminary Data
Issued Date : 2000.12.21
Revised Date : 2001.03.23
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HTL295I
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTL295I is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -500 V
VCEO Collector to Emitter Voltage .................................................................................. -500 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current ..................................................................................................... -250 mA
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA
VCB=-500V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
-500
-500
-6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
uA
uA
mV
V
-1
-10
-0.2
-500
-2
-3
-750
-
250
-
-
VCE=-500V, IB=0
VEB=-6V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-80mA, IB=-4mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
V
mV
-
-
-
-
-
-
-
50
60
50
10
-
*hFE2
*hFE3
fT
Cob
MHz
pF
30
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HTL295I
HSMC Product Specification