Spec. No. : HJ200202
Issued Date : 2000.12.21
Revised Date : 2002.01.23
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HTL294MJ
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTL294MJ is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
TO-252
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -400 V
VCEO Collector to Emitter Voltage................................................................................... -400 V
VEBO Emitter to Base Voltage............................................................................................. -6 V
IC Collector Current....................................................................................................... -800 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=10uA
VCB=-400V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
-400
-400
-6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
uA
uA
mV
mV
V
-1
-10
-0.2
-200
-300
-1.2
-750
-
250
-
-
VCE=-400V, IE=0
VEB=-6V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-80mA, IB=-4mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
-
mV
50
60
50
30
-
*hFE2
*hFE3
fT
Cob
MHz
pF
30
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HTL294MJ
HSMC Product Specification