Datasheet > HTL294MD

HTL294MD

更新时间： 2024-09-23 22:33:43

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	37K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HTL294MD 数据手册

Spec. No. : Preliminary Data

Issued Date : 2001.03.01

Revised Date : 2001.03.29

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HTL294MD

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTL294MD is designed for high voltage low power switching

applications especially for use in telephone and telecommunication

circuits.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ..................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................... 1.5 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ..................................................................................... -400 V

VCEO Collector to Emitter Voltage .................................................................................. -400 V

VEBO Emitter to Base Voltage ............................................................................................ -6 V

IC Collector Current...................................................................................................... -400 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-1mA, IB=0

IE=10uA

VCB=-400V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

ICES

IEBO

*VCE(sat)1

*VCE(sat)2

*VCE(sat)3

*VBE(sat)

*hFE1

-400

-6

-1

-10

-0.2

-200

-300

-1.2

-750

250

VCE=-400V, IE=0

VEB=-6V, IC=0

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

IC=-80mA, IB=-4mA

IC=-10mA, IB=-1mA

VCE=-10V, IC=-1mA

VCE=-10V, IC=-20mA

VCE=-10V, IC=-80mA

VCE=-20V, IE=-10mA, f=1MHz

VCB=-20V, f=1MHz, IE=0

*hFE2

*hFE3

Cob

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HTL294MD

HSMC Product Specification

12 3

中文翻译

下载PDF

与HTL294MD相关器件

型号	品牌	获取价格	描述	数据表
HTL294MI	HSMC	获取价格	PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MJ	HSMC	获取价格	PNP EPITAXIAL PLANAR TRANSISTOR
HTL294MT	ETC	获取价格	PNP-400V-0.8A#1.5W\|Bipolar Transistors
HTL294T	ETC	获取价格	PNP-400V-0.3A#1.5W\|Bipolar Transistors
HTL295D	HSMC	获取价格	PNP EPITAXIAL PLANAR TRANSISTOR
HTL295I	HSMC	获取价格	PNP EPITAXIAL PLANAR TRANSISTOR
HTL295J	ETC	获取价格	PNP-500V-0.3A#1.5W\|Bipolar Transistors
HTL295T	ETC	获取价格	PNP-500V-0.3A#1.5W\|Bipolar Transistors
HTL431	HUASHAN	获取价格	3-TERMINAL ADJUSTABLE VOLTAGE REGULATOR
HTL-OP07CS	ETC	获取价格	Voltage-Feedback Operational Amplifier