Spec. No. : Preliminary Data
Issued Date : 2000.12.21
Revised Date : 2001.03.23
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HTL294I
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTL294I is designed for application that requires high voltage.
Features
• High Breakdown Voltage: 400(Min.) at IC=1mA
• High Current: IC=300mA at 25°C
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -400 V
VCEO Collector to Emitter Voltage .................................................................................. -400 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current ..................................................................................................... -250 mA
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-400V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
-400
-400
-6
-
-
-
-
-
-
50
60
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
uA
uA
mV
mV
mV
-1
-10
-0.2
-300
-500
-750
-
250
-
-
VCE=-400V, IC=0
VEB=-6V, VBE=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*hFE2
*hFE3
ft
Cob
MHz
pF
30
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HTL294I
HSMC Product Specification