Datasheet > HTIP50

HTIP50

更新时间： 2024-01-15 04:39:08

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	35K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HTIP50 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	10	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	40 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	10 MHz	Base Number Matches：	1

HTIP50 数据手册

Spec. No. : HE6761

Issued Date : 1994.10.06

Revised Date : 2002.02.26

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HTIP50

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP50 is designed for line operated audio output amplifier

switch-mode power supply drivers and other switching applications.

TO-220

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W

Total Power Dissipation (Ta=25°C)....................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... 500 V

BVCEO Collector to Emitter Voltage.................................................................................. 400 V

BVEBO Emitter to Base Voltage............................................................................................ 5 V

IC Collector Current............................................................................................................... 1 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=1mA, IE=0

IC=30mA, IB=0

IE=0.1mA, IC=0

VEB=5V, IC=0

VCE=300V, IB=0

VCE=500V, VEB=0

IC=1A, IB=0.2A

IC=1A, VCE=10V

IC=0.3A, VCE=10V

IC=1A, VCE=10V

IC=0.2A, VCB=10V, f=2MHz

BVCBO

BVCEO

BVEBO

IEBO

ICEO

ICES

*VCE(sat)

VBE(on)

*hFE1

*hFE2

500

400

1.5

150

MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HTIP50

HSMC Product Specification

12 3

下载PDF

与HTIP50相关器件

型号	品牌	描述	获取价格	数据表
HTIP50D	ETC	NPN500V1A40W\|Bipolar Transistors	获取价格
HTIU2000	ETC	Peripheral IC	获取价格
HTIU2100	HONEYWELL	Microprocessor Circuit, CMOS, CQFP100, CERAMIC, LCC-100	获取价格
HTK	MERITEK	Aluminum Electrolytic Capacitors	获取价格
HTK0010	ETC	Interface IC	获取价格
HTK100V101MTA10X20	MERITEK	Aluminum Electrolytic Capacitors	获取价格