Datasheet > HTIP49

HTIP49

更新时间： 2022-11-27 00:18:44

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	35K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HTIP49 数据手册

Spec. No. : HE6726-A

Issued Date : 1998.07.01

Revised Date : 1999.08.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HTIP49

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP49 is designed for high voltage and switching applications.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 40 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................... 450 V

BVCEO Collector to Emitter Voltage................................................................................. 350 V

BVEBO Emitter to Base Voltage........................................................................................... 5 V

IC Collector Current.............................................................................................................. 1 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

IEBO

ICEO

ICES

*VCE(sat)

VBE(on)

*hFE1

*hFE2

450

350

1.5

150

IC=1mA

IC=30mA

IE=0.1mA

VEB=5V

VCE=250V

VCE=450V

IC=1A, IB=0.2A

IC=1A, VCE=10V

IC=0.3A, VCE=10V

IC=1A, VCE=10V

IC=0.2A, VCB=10V, f=2KHz

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3

中文翻译

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