Datasheet > HTIP42

HTIP42

更新时间： 2022-11-27 00:18:44

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	31K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HTIP42 数据手册

Spec. No. : HE6733

Issued Date : 1994.08.10

Revised Date : 2002.05.07

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HTIP42C

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP42C is designed for use in general purpose amplifier and

switching applications.

TO-220

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W

Total Power Dissipation (Ta=25°C)....................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................... -100 V

BVCEO Collector to Emitter Voltage................................................................................. -100 V

BVEBO Emitter to Base Voltage........................................................................................... -5 V

IC Collector Current.............................................................................................................. -6 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-1mA, IE=0

IC=-30mA, IB=0

VCE=-100V

VCE=-60V

VEB=-5V

IC=-6A, IB=-600mA

IC=-6A, VCE=-4V

IC=-0.3A, VCE=-4V

IC=-3A, VCE=-4V

IC=-0.1A, VCE=-5V, f=1MHz

BVCBO

BVCEO

ICES

ICEO

IEBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

-100

-400

-700

-1

-1.5

-2

MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HTIP42C

HSMC Product Specification

12 3

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