Datasheet > HTIP41C

HTIP41C

更新时间： 2024-01-13 07:24:29

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	37K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HTIP41C 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HTIP41C 数据手册

Spec. No. : HE6707

Issued Date : 1993.01.13

Revised Date : 2002.03.04

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HTIP41C

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP41C is designed for use in general purpose amplifier and

switching applications.

TO-220

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W

Total Power Dissipation (Ta=25°C)....................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... 100 V

BVCEO Collector to Emitter Voltage.................................................................................. 100 V

IC Collector Current............................................................................................................... 6 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=1mA, IE=0

IC=30mA, IB=0

VCE=100V, IB=0

VCE=60V, IB=0

VEB=5V, IC=0

IC=6A, IB=600mA

IC=6A, VCE=4V

IC=0.3A, VCE=4V

IC=3A, VCE=4V

BVCBO

BVCEO

ICES

ICEO

IEBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

100

400

700

1.5

MHZ

VCE=10V, IC=500mA, f=1MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE2

Rank

hFE2

15-50

40-75

HTIP41C

HSMC Product Specification

12 3

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