Spec. No. : HE6730-B
Issued Date : 1997.08.13
Revised Date : 1999.08.01
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP125
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP125 is designed for medium power linear and switching
applications.
(Ta=25°C)
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 65 W
Total Power Dissipation (Ta=25°C) ...................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... -60 V
BVCEO Collector to Emitter Voltage.................................................................................. -60 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current............................................................................................................. -5 A
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-1mA, IE=0
IC=-100mA, IB=0
VCE=-30V, IE=0
VCE=-60V, IB=0
VEB=-5V, IC=0
IC=-3A, IB=-12mA
IC=-5A, IB=-20mA
IC=-3A, VCE=-3V
IC=-0.5A, VCE=-3V
IC=-3A, VCE=-3V
VCB=-10V, f=0.1MHz, IE=0
BVCBO
*BVCEO
ICEO
ICBO
IEBO
*VCE(sat1)
*VCE(sat)2
*VBE(on)
*hFE1
-60
-60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
mA
mA
mA
V
-0.5
-0.2
-2
-2
-4
-2.5
-
-
V
V
1000
1000
-
*hFE2
Cob
300
FP
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification