Datasheet > HTIP122

HTIP122

更新时间： 2024-01-16 09:01:51

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	43K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HTIP122 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	5 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	1000	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	65 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

HTIP122 数据手册

Spec. No. : HE6712

Issued Date : 1993.01.13

Revised Date : 2002.05.07

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HTIP122

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP122 is designed for use in general purpose amplifier and low-

speed switching applications.

Absolute Maximum Ratings (Ta=25°C)

TO-220

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................................ +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)................................................................................................. 65 W

Total Power Dissipation (Ta=25°C)................................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ................................................................................................. 100 V

BVCEO Collector to Emitter Voltage.............................................................................................. 100 V

BVEBO Emitter to Base Voltage ....................................................................................................... 5 V

IC Collector Current (Continuous)...................................................................................................... 5 A

IC Collector Current (Peak)................................................................................................................ 8 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=1mA, IE=0

IC=100mA

VCB=100V

VCE=50V

BVCBO

*BVCEO

ICBO

ICEO

IEBO

*VCE(sat)1

*VCE(sat)2

*VBE(on)

*hFE1

100

200

500

2.5

VEB=5V

IC=3A, IB=12mA

IC=5A, IB=20mA

IC=3A, VCE=3V

IC=0.5A, VCE=3V

IC=3A, VCE=3V

VCB=10V, f=1MHz

*hFE2

Cob

200

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Darlington Schematic

HTIP122

HSMC Product Specification

12 3 4

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