Datasheet > HTIP117

HTIP117

更新时间： 2024-01-20 08:17:29

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	37K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HTIP117 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

HTIP117 数据手册

Spec. No. : HE200204

Issued Date : 2000.08.01

Revised Date : 2002.01.18

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HTIP117

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP117 is designed for use in general purpose amplifier and low-

speed switching applications.

Absolute Maximum Ratings (Ta=25°C)

TO-220

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................................ +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)................................................................................................. 50 W

Total Power Dissipation (Ta=25°C)................................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ............................................................................................... -100 V

BVCEO Collector to Emitter Voltage............................................................................................ -100 V

BVEBO Emitter to Base Voltage ...................................................................................................... -5 V

IC Collector Current (Continue)........................................................................................................ -4 A

IC Collector Current (Peak).............................................................................................................. -6 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

ICBO

ICEO

IEBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

Cob

-100

500

-1

-2

-2.5

-2.8

IC=-1mA

IC=-30mA

VCB=-100V

VCE=-50V

VEB=-5V

IC=-2A, IB=-8mA

IC=-2A, VCE=-4V

IC=-1A, VCE=-4V

IC=-2A, VCE=-4V

VCB=-10V, f=0.1MHz

200

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Darlington Schematic

HTIP117

HSMC Product Specification

12 3

下载PDF

与HTIP117相关器件

型号	品牌	描述	获取价格	数据表
HTIP117D	HSMC	PNP EPITAXIAL PLANAR TRANSISTOR	获取价格
HTIP122	HSMC	NPN EPITAXIAL PLANAR TRANSISTOR	获取价格
HTIP125	HSMC	PNP EPITAXIAL PLANAR TRANSISTOR	获取价格
HTIP127	HSMC	PNP EPITAXIAL PLANAR TRANSISTOR	获取价格
HTIP29C	HSMC	NPN EPITAXIAL PLANAR TRANSISTOR	获取价格
HTIP31C	HSMC	NPN EPITAXIAL PLANAR TRANSISTOR	获取价格