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HTIP105 PDF预览

HTIP105

更新时间: 2024-01-02 08:27:24
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
3页 38K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

HTIP105 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84

HTIP105 数据手册

 浏览型号HTIP105的Datasheet PDF文件第2页浏览型号HTIP105的Datasheet PDF文件第3页 
Spec. No. : HE6743  
Issued Date : 1998.07.01  
Revised Date : 2001.08.30  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HTIP105  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HTIP105 is designed for monolithic construction with built in base-  
emitter shunt resistors industrial.  
Absolute Maximum Ratings (Ta=25°C)  
Maximum Temperatures  
Storage Temperature .......................................................................................................... -55 ~ +150 °C  
Junction Temperature .................................................................................................. +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C) ................................................................................................... 80 W  
Maximum Voltages and Currents  
BVCBO Collector to Base Voltage.................................................................................................... -60 V  
BVCEO Collector to Emitter Voltage................................................................................................. -60 V  
BVEBO Emitter to Base Voltage......................................................................................................... -5 V  
IC Collector Current............................................................................................................................ -8 A  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICEO  
ICBO  
IEBO  
*VCE(sat)1  
*VCE(sat)2  
*VBE(on)  
*hFE1  
-60  
-60  
-5  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA  
uA  
mA  
V
IC=-1mA  
IC=-30mA  
IE=-0.1mA  
VCE=-30V  
VCB=-60V  
VEB=-5V  
IC=-3A, IB=-6mA  
IC=-8A, IB=-80mA  
IC=-8A, VCE=-4V  
IC=-3A, VCE=-4V  
IC=-8A, VCE=-4V  
VCE=-10V, f=100KHz  
-50  
-50  
-8  
-2  
-2.5  
-2.8  
20000  
-
V
V
1000  
200  
-
*hFE2  
Cob  
300  
pF  
*Pulse Test : Pulse Width 380us, Duty Cycle2%  
Darlington Schematic  
C
B
R1  
R2  
E
HTIP105  
HSMC Product Specification  

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