5秒后页面跳转
HTIF127 PDF预览

HTIF127

更新时间: 2024-10-01 22:19:43
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
3页 38K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

HTIF127 数据手册

 浏览型号HTIF127的Datasheet PDF文件第2页浏览型号HTIF127的Datasheet PDF文件第3页 
Spec. No. : HE9216-A  
Issued Date : 1998.07.01  
Revised Date : 1999.08.01  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HTIF127  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HTIF127 is designed for use in general purpose amplifier and  
low-speed switching applications.  
(Ta=25°C)  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature ................................................................................... +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C) .................................................................................... 45 W  
Maximum Voltages and Currents  
BVCBO Collector to Base Voltage................................................................................... -100 V  
BVCEO Collector to Emitter Voltage................................................................................ -100 V  
BVEBO Emitter to Base Voltage.......................................................................................... -5 V  
IC Collector Current (Pulse)................................................................................................. -8 A  
IC Collector Current (Continuous)........................................................................................ -5 A  
IB Base Current ............................................................................................................ -120 mA  
(Ta=25°C)  
Characteristics  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
*BVCEO  
ICBO  
ICEO  
IEBO  
*VCE(sat)1  
*VCE(sat)2  
*VBE(on)  
*hFE1  
-100  
-100  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
uA  
uA  
mA  
V
V
V
K
K
IC=-1mA  
IC=-100mA  
VCB=-100V  
VCE=-50V  
-
-
-
-
-
-
1
1
-200  
-500  
-2  
-2  
-4  
-2.5  
-
-
VEB=-5V  
IC=-3A, IB=-12mA  
IC=-5A, IB=-20mA  
IC=-3A, VCE=-3V  
IC=-0.5A, VCE=-3V  
IC=-3A, VCE=-3V  
*hFE2  
*Pulse Test : Pulse Width 380us, Duty Cycle2%  
HSMC Product Specification  

与HTIF127相关器件

型号 品牌 获取价格 描述 数据表
HTIL-311A AVAGO

获取价格

4X7 DOT MATRIX DISPLAY, RED, 6.86mm
HTIP102 HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HTIP105 HSMC

获取价格

PNP EPITAXIAL PLANAR TRANSISTOR
HTIP107 HSMC

获取价格

PNP EPITAXIAL PLANAR TRANSISTOR
HTIP112 HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HTIP117 HSMC

获取价格

PNP EPITAXIAL PLANAR TRANSISTOR
HTIP117D HSMC

获取价格

PNP EPITAXIAL PLANAR TRANSISTOR
HTIP122 HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HTIP125 HSMC

获取价格

PNP EPITAXIAL PLANAR TRANSISTOR
HTIP127 HSMC

获取价格

PNP EPITAXIAL PLANAR TRANSISTOR