Datasheet > HTF16A60

HTF16A60

更新时间： 2024-09-28 05:38:31

品牌	Logo	应用领域
华汕 - HUASHAN		可控硅三端双向交流开关
页数	文件大小	规格书
3页	202K
描述
INSULATED TYPE TRIAC (TO-220F PACKAGE)

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数据手册

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HTF16A60 数据手册

Shantou Huashan Electronic Devices Co.,Ltd.

HTF16A60

INSULATED TYPE TRIAC (TO-220F PACKAGE)

█ Features

* Repetitive Peak Off-State Voltage: 600V

* R.M.S On-State Current(I_T(RMS)=16A)

* High Commutation dv/dt

*Isolation Voltage（V^ISO=1500V AC）

TO-220F

█ General Description

This device is fully isolated package suitable for AC switching application,

phase control application such as fan speed and temperature modulation

control, lighting control and static switching relay.

█ Absolute Maximum Ratings（T_a=25℃）

T_stg——Storage Temperature………………………………………………………………… -40~125℃

T_j——Operating Junction Temperature …………………………………………………… -40~125℃

P_GM——Peak Gate Power Dissipation………………………………………………………………… 5W

V_DRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V

IT（RMS）——R.M.S On-State Current（Tc=68℃）………………………………………………… 16A

V_GM——Peak Gate Voltage…………………………………………………………………………… 10V

I_GM——Peak Gate Current…………………………………………………………………………… 2.0A

ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ………………… 155/170A

V^ISO——Isolation Breakdown Voltage（R.M.S，A.C.1minute）………………………………………1500V

█ Electrical Characteristics（T_a=25℃）

Symbol

Items

Min

Max Unit

Conditions

V_D=V_DRM,Single Phase,Half

Wave, T_J=125℃

I_DRM

Repetitive Peak Off-State Current

2.0

Peak On-State Voltage

I_T=25A, Inst. Measurement

V_TM

I+_GT1

I-_GT1

I-_GT3

V+_GT1

V-_GT1

V-_GT3

V_GD

1.4

Gate Trigger Current（Ⅰ）

Gate Trigger Current（Ⅱ）

Gate Trigger Current（Ⅲ）

Gate Trigger Voltage（Ⅰ）

Gate Trigger Voltage（Ⅱ）

V_D=6V, R_L=10 ohm

T_J=125℃,V_D=1/2V_DRM

1.5

Gate Trigger Voltage（Ⅲ）

Non-Trigger Gate Voltage

Critical Rate of Rise of Off-State

Voltage at Commutation

0.2

(dv/dt)c

V/µS T_J=125℃,V_D=2/3V_DRM(di/dt)c=-8A/ms

Holding Current

I_H

Thermal Resistance

Junction to case

Rth(j-c)

3.0 ℃/W

12 3

中文翻译

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