HT83FXX
Flash Type Voice OTP MCU
Technical Document
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Application Note
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HA0075E MCU Reset and Oscillator Circuits Application Note
Features
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Operating voltage: 2.7V~3.6V
System clock: 4MHz~8MHz
Crystal and RC system oscillator
12 I/O pins
4-level subroutine nesting
2.7V Low voltage detection, tolerance 5%
Integrated LDO regulator in
HT83F10P/20P/40P/60P/80P
I2C/SPI Bus Serial Interface, shared with PB
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Power-down function and wake-up feature reduce
power consumption
2K´15 OTP Program Memory
Up to 1ms (0.5ms) instruction cycle with 4MHz (8MHz)
system clock at VDD= 3.6V
Between 2M´8 bit and 128K´8 bit flash type data
memory
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63 powerful instructions
One reset pin
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80´8 Data Memory
Two 8-bit programmable timer counter with 8-stage
prescaler and one time base counter
Flash Data Memory can be re-programmed up to
100,000 times
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12-bit high quality voltage type D/A output
PWM circuit direct drive speaker
Watchdog Timer function
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Flash Data Memory data retention > 10 years
44-pin QFP package
General Description
The flash type voice series of MCUs have OTP type
Program Memory and Flash type Voice Memory.
The devices are excellent solutions for versatile voice
and sound effect product applications with their efficient
MCU instructions providing the user with programming
capability for powerful custom applications. The system
frequency can be up to 8MHz at an operating voltage of
2.7V and include a power-down function to reduce
power consumption.
The devices are 8-bit high performance microcontrollers
which include a voice synthesizer and tone generator.
They are designed for applications which require multiple
I/Os and sound effects, such as voice and melody. The
devices can provide various sampling rates and beats,
tone levels, tempos for speech synthesizer and melody
generator.
The MCU flash voice memory capacity ranges from
2M´8 bit to 128K´8 bit, into which the user can down-
load their voice data repeatedly.
They also include two integrated high quality, voltage
type DAC outputs and voltage type PWM outputs.
Rev. 1.10
1
January 21, 2010