Datasheet > HT112

HT112

更新时间： 2024-01-24 20:26:10

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
5页	55K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HT112 数据手册

Spec. No. : HT200101

Issued Date : 2000.05.01

Revised Date : 2005.12.02

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

HT112

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HT112 is designed for use in general purpose amplifier and low-speed

switching applications.

TO-126

Absolute Maximum Ratings (T_A=25°C)

• Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150 °C

Junction Temperature ................................................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T_A=25°C) ................................................................................................................... 1.5 W

Total Power Dissipation (T_C=25°C).................................................................................................................... 30 W

• Thermal Resistance

Junction To Case R_θjc................................................................................................................................... 4.2 ^oC/W

• Maximum Voltages and Currents

BV_CBOCollector to Base Voltage....................................................................................................................... 100 V

BV_CEOCollector to Emitter Voltage.................................................................................................................... 100 V

BV_EBOEmitter to Base Voltage.............................................................................................................................. 5 V

I_CCollector Current................................................................................................................................................ 4 A

Electrical Characteristics (T_A=25°C)

Symbol

BV_CBO

BV_CEO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

100

I_C=1mA

100

I_C=30mA

V_CB=100V

I_CEO

V_CE=50V

I_EBO

V_EB=5V

*V_CE(sat)

*V_BE(on)

*h_FE1

2.5

2.8

I_C=2A, I_B=8mA

I_C=2A, V_CE=4V

I_C=1A, V_CE=4V

I_C=2A, V_CE=4V

V_CB=10V, I_E=0

*h_FE2

500

Cob

100

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HT112

HSMC Product Specification

12 3 4 5

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