Datasheet > HSU88

HSU88

更新时间： 2024-09-26 05:38:43

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	33K
描述
Silicon Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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HSU88 数据手册

SMD Type

Diodes

Silicon Schottky Barrier Diode

HSU88

SOD-123

Unit: mm

+0.1

2.7

-0.1

+0.05

1.1

-0.05

Features

Low capacitance. (C=0.8pF max)

Low forward voltage.

+0.1

3.7

-0.1

0.1max

Ultra small Resin Package (URP) is suitablefor high density surface

mounting and high speed assembly.

0.50

0.35

A b s o lu te M a xim u m R a tin g s T a = 2 5

P a ra m e te r

R e v e rs e V o lta g e

S ym b o l

V R

V a lu e

U n it

1 0

1 5

A v e ra g e re c tifie d c u rre n t

J u n c tio n te m p e ra tu re

S to ra g e te m p e ra tu re

m A

T j

1 2 5

T s tg

-5 5 to + 1 2 5

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

Conditions

Min

Typ

Max

Unit

IF = 1 mA

IF = 10 mA

VR = 2 V

350

500

420

580

0.2

Reverse current

Capacitance

VR = 10 V

VR =0 V, f = 1 MHz

C = 200pF , Both forward and

reverse direction 1 pulse.

0.8

ESD-Capability (Note 1)

Note

1. Failure criterion ; IR 400 nA at VR =2 V

Marking

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中文翻译

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