Datasheet > HSK1118

HSK1118

更新时间： 2024-11-10 22:33:39

品牌	Logo	应用领域
HSMC		/
页数	文件大小	规格书
5页	64K
描述
Silicon N Channel MOS Type

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技术参数
数据手册

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HSK1118 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

HSK1118 数据手册

Spec. No. : Preliminary Data

Issued Date : 1998.02.01

Revised Date : 1999.08.01

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

HSK1118

Description

• Field Effect Transistor.

• Silicon N Channel MOS Type.

• High Speed, High Current DC-DC Converter, Relay Drive and

Motor Drive Applications

Features

• 4-Volt Gate Drive

• Low Drain-Source On Resistanc - R_DS(on)=0.95Ω (Typ.)

• High Forward Transfer Admittance - | Yfs |=4.0S (Typ.)

• Low Leakage Current - I_DSS= 300uA (Max.) @V_DS= 600V

• Enhancement-Mode - V_th= 1.5~3.5V @V_DS= 10V, I_D= 1mA

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ...................................................................................................... 150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 45 W

• Maximum Voltages and Currents (Tc=25°C)

DRAIN to SOURCE Breakdown Voltage .......................................................................... 600 V

DRAIN to GATE Breakdown Voltage ................................................................................ 600 V

GATE to SOURCE Voltage............................................................................................... ±30 V

DRAIN Current (Cont.).......................................................................................................... 6 A

DRAIN Current (Pluse) ....................................................................................................... 24 A

Thermal Characteristics

Characteristic

Junction to Case

Junction to Ambient

Symbol

RθJC

Max.

2.77

62.5

Units

°C/W

RθJA

Note : This transistor is an electrostatic sensitive device. Please handle with care.

HSMC Product Specification

12 3 4 5

中文翻译

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