Datasheet > HSD1609

HSD1609

更新时间： 2024-11-28 22:33:39

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	41K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HSD1609 数据手册

Spec. No. : HE6606

Issued Date : 1993.03.15

Revised Date : 2002.01.15

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HSD1609

NPN EPITAXIAL PLANAR TRANSISTOR

Features

• Low frequency high voltage amplifier

• Complementary pair with HSB1109

TO-126ML

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C).................................................................................. 1.25 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... 160 V

BVCEO Collector to Emitter Voltage.................................................................................. 160 V

BVEBO Emitter to Base Voltage............................................................................................ 5 V

IC Collector Current........................................................................................................ 100 mA

Electrical Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

*VCE(sat)

VBE(on)

*hFE1

*hFE2

160

IC=10uA

IC=1mA

IE=10uA

1.5

320

VCB=140V

IC=30mA, IB=3mA

IC=10mA, VCE=5V

IC=1mA, VCE=5V

IC=10mA , VCE=5V

VCB=10V, f=1MHz

145

MHz

Cob

3.8

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

Range

60-120

100-200

160-320

HSD1609

HSMC Product Specification

12 3 4

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