Datasheet > HSC5094

HSC5094

更新时间： 2024-11-15 22:48:31

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
7页	64K
描述
NPN SILICON BIPOLAR TRANSISTOR

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数据手册

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HSC5094 数据手册

Spec. No. : HN200103

Issued Date : 1999.08.01

Revised Date : 2002.10.25

Page No. : 1/7

HI-SINCERITY

MICROELECTRONICS CORP.

HSC5094

NPN SILICON BIPOLAR TRANSISTOR

Description

The HSC5094 is a NPN Silicon Transistor designed for low noise

amplifier at VHF, UHF and CATV band.

SOT-23

Features

• Low Noise and High Gain: NF=1.4dB, Ga=12dB @ V_CE=2V, Ic=4.2mA, f=0.9GHz

• High Power Gain: MAG=13.5dB @ V_CE=5V, Ic =4.5mA, f=0.9GHz

Applications

• Low noise and high gain amplifiers

• Oscillator buffer amplifiers

Electrical Characteristics

• Maximum Ratings (Ta=25°C)

Parameters

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V_CEO

V_CBO

V_EBO@ I_E=100uA

Min.

Typ.

2.5

*20

150

125

Max.

Unit

I_C

P_C

T_j

°C

T_stg

-50

125

* Note: Here we define the point where the DC current gain drops off.

• Characterization Information (Ta=25°C)

Parameters

Conditions

Symbol Min Typ. Max Unit

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

V_CB=3V

V_EB=1V

V_CE=2V, I_C=1mA

V_CE=1V, I_C=10mA

V_CE=3V, I_C=12mA

V_CE=2V, I_C=4.2mA, f =0.9GHz

V_CE=5V, I_C=4.5mA, f =0.9GHz

V_CE=2V, I_C=4.2mA, f =0.9GHz

V_CE=5V, I_C=4.5mA, f =0.9GHz

V_CE=2V, I_C=4.2mA, f =0.9GHz

V_CE=5V, I_C=4.5mA, f =0.9GHz

I_CBO

I_EBO

h_FE

80 200

7.6

1.4

1.6

13.5

12.8

13.5

GHz

Cutoff Frequency

Minimum Noise Figure

Associated Gain

f_T

NF_min

G_A

Insertion Gain |S₂₁|²

in 50 Ohm system

|S₂₁|²

HSC5094

HSMC Product Specification

12 3 4 5 6 7

中文翻译

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