Spec. No. : HE6739-C
Issued Date : 1994.05.18
Revised Date : 1999.08.01
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HSC4242
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC4242 is designed for triple diffused planar type and high
speed switching applications.
(Ta=25°C)
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 450 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage......................................................................................... 10 V
IC Collector Current.............................................................................................................. 7 A
IB Base Current .................................................................................................................... 2 A
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=1mA, IE=0
IC=100mA, IB=0
IE=1mA, IC=0
VCB=450V, IE=0
VEB=10V, IC=0
IC=4A, IB=0.8A
IC=4A, IB=0.8A
IC=0.8A, VCE=5V
IC=2A, VCE=5V
IC=4A, VCE=5V
BVCBO
BVCEO
BVEBO
ICBO
450
400
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
uA
V
100
100
0.8
1.2
55
-
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
-
V
15
10
10
-
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
A
B1
B2
29-42
B3
B4
Range
15-28
22-35
36-49
43-55
HSMC Product Specification